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Principal Engineer Technology Development

Salary undisclosed

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#WeAreIn for driving decarbonization and digitalization.
As a global leader in semiconductor solutions in power systems and IoT, Infineon enables game-changing solutions for green and efficient energy, clean and safe mobility, as well as smart and secure IoT. Together, we drive innovation and customer success, while caring for our people and empowering them to reach ambitious goals. Be a part of making life easier, safer and greener.
Are you in?

We are on a journey to create the best Infineon for everyone.
This means we embrace diversity and inclusion and welcome everyone for who they are. At Infineon, we offer a working environment characterized by trust, openness, respect and tolerance and are committed to give all applicants and employees equal opportunities. We base our recruiting decisions on the applicant´s experience and skills.
Please let your recruiter know if they need to pay special attention to something in order to enable your participation in the interview process.

In your new role you will:

  • Drive the development & process integration of power technologies.
  • Lead technology development projects in a cross-functional mode with the goal to release the technology and devices to production and market
  • Work together with unit process development experts to define process requirements and to optimize process modules
  • Plan, execute and evaluate development experiments by using Design of Experiment technique
  • Define and design test structure for process control, assess the data and correlate to process and device characteristics
  • Perform electrical device characterizations
  • Lead problem solving teams using systematic approaches (eg. 8D or Six Sigma)
  • Act as key technical expert and key knowledge exchange person for technology group
  • Take leading role and ownership in a creative way and create IP´s when possible

You are best equipped for this task if you have:

  • University degree or above in electrical engineering, microelectronics, physics or other relevant studies.
  • 8-10 + years of experience in semiconductor technologies, process integration & technology development.
  • Cross site technical sharing & On Job Training will be provided.
  • A strong background of semiconductors physics, especially GaN HEMT structures and the III-V material system.
  • Experience with process integration, power device development, characterization and process development.
  • A strong background of semiconductors physics, especially GaN HEMT structures and the III-V material system will be added advantage.
  • Worked in multicultural, high-tech environment project teams before, with project management skill set, and led development projects
  • Good expertise in milestone planning and corresponding release procedures
  • A strong analytical mindset with systematic problem-solving techniques
  • A high level of self motivation, result focus and ability to work under high dynamic situation
  • Excellent communication and negotiation skills, and good team player
  • Demonstrated excellent leadership skills and ability to lead a technical team